Download Bi-Polar Power Transistor Data Book [rev 8] PDF

Полный официальной каталог мощных транзисторов от ON Semiconductor за 2001 год. Приведены все электрические и геометрические параметры. Расшифровки обозначений и т. п.

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1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 5 — Adc DYNAMIC CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (non–repetitive), VCE = 100 V, See Figure 12 (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. *Indicates JEDEC Registered Data. 1 Figure 12.

52 _C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 0 s, Nonrepetitive) DYNAMIC CHARACTERISTICS *Indicates Within JEDEC Registration.

Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 50 Publication Order Number: 2N4918/D 2N4918 thru 2N4920 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 1. 0 kHz) hfe 25 — — *Indicates JEDEC Registered Data. 0 V VCC = 30 V VBE(off) = 0 10 Figure 2. Switching Time Equivalent Test Circuit 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. 0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

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